Lowest noise deep sub-micron SPAD

[MEGAFRAME] July 2009: MEGAFRAME reports on the a new low noise single-photon avalanche diode (SPAD) fabricated in a 130 nm CMOS imaging process (SSE 2009). To the best of our knowledge, the DCR (Dark Count Rate) per unit area achieved in these devices is the lowest ever reported in deep sub-micron CMOS SPADs.